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N.A. Tursunov

Работ: 24

Institute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

  1. Formation of radiation defects in zinc-doped silicon solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +5

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 4
    ABI

  2. Radiation-induced formation of ZnO nanoparticles on the ZnSe single-crystal surface

    D. B. Él’murotova, Э. М. Ибрагимова, M. U. Kalanov +1

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2009Цитирований: 3
    ABI

  3. Influence of the conductivity type of silicon on the process of radiation degradation of solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 2
    ABI

  4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    СтатьяAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal2009Цитирований: 1
    ABI

  5. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1
    ABI

  6. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2010Цитирований: 1
    ABI

  7. The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov

    СтатьяSemiconductor Quantum Structures and Devices1995Цитирований: 0
    ABI

  8. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяGraphite, nuclear technology, radiation studies1995Цитирований: 0
    ABI

  9. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    СтатьяSilicon and Solar Cell Technologies1997Цитирований: 0
    ABI

  10. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяSilicon and Solar Cell Technologies1997Цитирований: 0
    ABI

  11. The influence of technological regimes of the silicon solar cells production on the formation of radiation effects

    M. Ashurov, Sh. Makhkamov, S.V. Martnchenko +2

    СтатьяEnvironmental Sustainability and Technology1997Цитирований: 0
    ABI

  12. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

    M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

    СтатьяSemiconductor materials and interfacesMRS Proceedings1998Цитирований: 0
    ABI

  13. Characteristics of the formation of radiation defects in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяGraphite, nuclear technology, radiation studiesTechnical Physics1999Цитирований: 0
    ABI

  14. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    СтатьяSemiconductor materials and interfaces1999Цитирований: 0
    ABI

  15. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    СтатьяSilicon and Solar Cell Technologies1999Цитирований: 0
    ABI

  16. Formation of radiation defects in silicon structures under low-intensity electron irradiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology2001Цитирований: 0
    ABI

  17. Peculiarities of silicon structures doped by neutron-transmutation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяElectric Power Systems and Control2002Цитирований: 0
    ABI

  18. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
    ABI

  19. Study of influence of γ-quanta 60 Co on recombination properties of Si and Si

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +2

    СтатьяSemiconductor materials and interfaces2007Цитирований: 0
    ABI

  20. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2008Цитирований: 0
    ABI

  21. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +2

    СтатьяAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal2011Цитирований: 0
    ABI

  22. Fast neutron influence on properties of neutron-doped silicon with copper impurity

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +4

    СтатьяSilicon and Solar Cell Technologies2012Цитирований: 0
    ABI

  23. Thermoresistor based on neutron compensated silicon

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +3

    СтатьяAdvanced MEMS and NEMS Technologies2012Цитирований: 0
    ABI

  24. Formation of Copper Impurity-Defect Complexes and Their Impact on Electrical Properties of Silicon

    M. Kаrimov, Sh. Machkamov, N.A. Tursunov +4

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2014Цитирований: 0
    ABI