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M. Ashurov

Работ: 20

AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

  1. The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov

    СтатьяSemiconductor Quantum Structures and Devices1995Цитирований: 0
    ABI

  2. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяGraphite, nuclear technology, radiation studies1995Цитирований: 0
    ABI

  3. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    СтатьяSilicon and Solar Cell Technologies1997Цитирований: 0
    ABI

  4. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяSilicon and Solar Cell Technologies1997Цитирований: 0
    ABI

  5. The influence of technological regimes of the silicon solar cells production on the formation of radiation effects

    M. Ashurov, Sh. Makhkamov, S.V. Martnchenko +2

    СтатьяEnvironmental Sustainability and Technology1997Цитирований: 0
    ABI

  6. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

    M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

    СтатьяSemiconductor materials and interfacesMRS Proceedings1998Цитирований: 0
    ABI

  7. Characteristics of the formation of radiation defects in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяGraphite, nuclear technology, radiation studiesTechnical Physics1999Цитирований: 0
    ABI

  8. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    СтатьяSemiconductor materials and interfaces1999Цитирований: 0
    ABI

  9. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    СтатьяSilicon and Solar Cell Technologies1999Цитирований: 0
    ABI

  10. Formation of radiation defects in silicon structures under low-intensity electron irradiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology2001Цитирований: 0
    ABI

  11. Peculiarities of silicon structures doped by neutron-transmutation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяElectric Power Systems and Control2002Цитирований: 0
    ABI

  12. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
    ABI

  13. Investigations of radiation induced transient absorption and emission in the quartz-polymer optical fiber

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +5

    СтатьяGlass properties and applications2006Цитирований: 0
    ABI

  14. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2008Цитирований: 0
    ABI

  15. Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +3

    СтатьяGlass properties and applicationsJapanese Journal of Applied Physics2011Цитирований: 0
    ABI

  16. Thermovoltaic properties of microgranular silicon

    B. M. Abdurahmanov, M. M. Adilov, M. Ashurov +2

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2011Цитирований: 0
    ABI

  17. Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +3

    СтатьяLuminescence Properties of Advanced MaterialsJapanese Journal of Applied Physics2011Цитирований: 0
    ABI

  18. Dose and Dose Rate Dependency of Radiationinduced Transient Absorption in Pure Silica Optical Fibers Under Gamma Irradiation

    Maksudbek Baydjanov, M. Ashurov, И. Нуритдинов +2

    СтатьяGlass properties and applications2017Цитирований: 0
    ABI

  19. Features of Radiation Physics of Topological Insulators

    B. L. Oksengendler, С. Е. Максимов, S. H. Suleymanov +7

    СтатьяTopological Materials and PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  20. An electronic approach to understanding the kinetics of hydrogen peroxide formation

    M. Ashurov, Б. Л. Оксенгендлер, N. N. Turaeva

    СтатьяPhotoreceptor and optogenetics researchChemical Physics2025Цитирований: 0
    ABI