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M. Kаrimov

Работ: 27

Institute of Nuclear Physics

  1. Formation of radiation defects in zinc-doped silicon solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +5

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 4
    ABI

  2. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3
    ABI

  3. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2005Цитирований: 2
    ABI

  4. Influence of the conductivity type of silicon on the process of radiation degradation of solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 2
    ABI

  5. Semiconductor Storage Dosimeter Based on Neutron-Doped Silicon

    Marat S. Yunusov, M. Kаrimov, M. Khakimov

    СтатьяRadiation Effects in ElectronicsAtomic Energy2001Цитирований: 2
    ABI

  6. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    СтатьяAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal2009Цитирований: 1
    ABI

  7. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1
    ABI

  8. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

    Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters1999Цитирований: 1
    ABI

  9. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

    Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2005Цитирований: 1
    ABI

  10. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2010Цитирований: 1
    ABI

  11. About mechanism of radiation stability in compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    СтатьяGraphite, nuclear technology, radiation studies1997Цитирований: 0
    ABI

  12. Carrier-removal rates under the action of gamma radiation in n-type compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    СтатьяSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali1997Цитирований: 0
    ABI

  13. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    СтатьяSemiconductor materials and interfacesSemiconductors1998Цитирований: 0
    ABI

  14. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

    M. Kаrimov, A. K. Karakhodzhaev

    СтатьяSemiconductor materials and interfacesRussian Physics Journal2001Цитирований: 0
    ABI

  15. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

    Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2001Цитирований: 0
    ABI

  16. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

    N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

    СтатьяSilicon and Solar Cell Technologies2003Цитирований: 0
    ABI

  17. Carrier removal rates in compensated silicon at γ-radiation

    M. Kаrimov, Sh. Mahkamov, Zhalelov

    СтатьяSilicon and Solar Cell Technologies2003Цитирований: 0
    ABI

  18. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2006Цитирований: 0
    ABI

  19. Influence of γ- radiation on the recombination properties of P-type nickel doped silicon

    A. O. Kurbanov, M. Kаrimov

    СтатьяSilicon and Solar Cell Technologies2006Цитирований: 0
    ABI

  20. Study of influence of γ-quanta 60 Co on recombination properties of Si and Si

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +2

    СтатьяSemiconductor materials and interfaces2007Цитирований: 0
    ABI

  21. Electrophysical properties of under-doped cuprates at internal effects

    M. Kаrimov, Sh. A. Makhmudov, Z.S. Khudajbergenov +1

    СтатьяMetallurgical Processes and Thermodynamics2007Цитирований: 0
    ABI

  22. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2008Цитирований: 0
    ABI

  23. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +2

    СтатьяAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal2011Цитирований: 0
    ABI

  24. Fast neutron influence on properties of neutron-doped silicon with copper impurity

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +4

    СтатьяSilicon and Solar Cell Technologies2012Цитирований: 0
    ABI

  25. Thermoresistor based on neutron compensated silicon

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +3

    СтатьяAdvanced MEMS and NEMS Technologies2012Цитирований: 0
    ABI