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K. A. Begmatov

Работ: 7

Institute of Nuclear Physics , Ulugbek, Tashkent, 702132, Uzbekistan

  1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3
    ABI

  2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2005Цитирований: 2
    ABI

  3. On several regularities of deep levels of d-impurities in silicon

    Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1995Цитирований: 2
    ABI

  4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    СтатьяAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal2009Цитирований: 1
    ABI

  5. Semiconductor detector as ionising radiation dosimeter

    Marat S. Yunusov, A. Akhmadaliev, K. A. Begmatov

    СтатьяRadiation Detection and Scintillator TechnologiesRadiation Physics and Chemistry1995Цитирований: 1
    ABI

  6. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

    N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

    СтатьяSilicon and Solar Cell Technologies2003Цитирований: 0
    ABI

  7. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
    ABI