The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

Abstract In this work the results of studies of defect formation kinetics of radiation centers Ev +0.25eV (divacancy), Ev +0.36eV (complex “divacency +oxygen+carbon” and Ev +0.44eV (“vacancy+interstitial boron”) are presented for various doping level impurities M (Au, Cd, Pt, Ir, Rh, Zn, Cu, Ni). It was shown that with increasing concentration of impurities the concentration of radiation center Ev +0.36eV, decreases, but concentration of centers Ev +0.44eV increases. Observed results can be explained by radiation decay of deep level impurity + self-interstitial and deep level impurity + vacancy complexes formed by thermaldiffusion doping. As a result, the released self-interstitial atoms activity take part in quasichemical reactions, significantly affecting the creation of adiation defect. Dependence of the generation efficiency of radiation centers on size of covalent radius of the atom impurity M is observed.

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