Работы, цитирующие эту работу

Работ: 3

Работа: The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2005Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.235254

3. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   СтатьяSilicon and Solar Cell TechnologiesJournal of Ovonic Research2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010786