D.A. Rakhmanov

Работ: 2

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, Uzbekistan

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   СтатьяSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010369