A.S. Doroshkevich

Работ: 4

Institute of Materials Science of Uzbekistan Academy of Sciences, 102226, Tashkent, Uzbekistan

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Interfacial interactions and free volume in multicomponent titanium-based carbon-nitrides coatings

   Matlab N. Mirzayev, A. Atilgan, S.F. Samadov +12

   СтатьяMuon and positron interactions and applicationsCeramics International2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.002320

3. Effects of X-ray radiation on the electronic properties of MAPbBr3 perovskite films

   A.S. Doroshkevich, Zh.V. Mezentseva, L.M. Ledo-Pereda +11

   СтатьяPerovskite Materials and ApplicationsPhysics Letters A2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.004657

4. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   СтатьяSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010369