Shakhrukh Kh. Daliev

Работ: 24

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1
СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2023Цитирований: 12
ABI
Features of the behavior of lanthanum and hafnium atoms in silicon
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1
СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2006Цитирований: 9
ABI
Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8
ABI
Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 5
ABI
PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS
Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4
СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4
ABI
On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Shakhrukh Kh. Daliev, Fayzulla A. Saparov
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 3
ABI
Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity
Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2
ABI
Raman Spectroscopy of Gamma-Irradiated Silicon Doped with Rhodium
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Dilmurod A. Rakhmanov +2
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 2
ABI
Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium
Shakhrukh Kh. Daliev
СтатьяIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology2018Цитирований: 1
ABI
Energy Spectrum of Defective Centers in Silicon Doped with Molybdenum
Shakhrukh Kh. Daliev, Shoira Usmanova, Anifa Paluanova +21
СтатьяSemiconductor materials and interfacesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 1
ABI
Influence of Gold on Structural Defects of Silicon
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 1
ABI
Study of a solar cell with a silicon-based photodiode structure
Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3
СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2024Цитирований: 1
ABI
Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au
Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3
СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1
ABI
INFLUENCE OF THE INTERFACE ON THE ELECTRICAL CHARACTERISTICS OF MIS STRUCTURES
Shakhrukh Kh. Daliev, Fayzulla A. Saparov
СтатьяEngineering Diagnostics and ReliabilityEuropean Science Review2022Цитирований: 1
ABI
Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures
Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev
СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
ABI
Influence of thermal treatment on characteristics of silicon doped by lanthanium
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1
СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2006Цитирований: 0
ABI
Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30
СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 0
ABI
EFFECT OF GADOLINIUM ATOMS ON DEFECT FORMATION IN SILICON DOPED WITH MOLYBDENUM IMPURITIES
Shakhrukh Kh. Daliev, Anifa Paluanova
СтатьяSilicon Nanostructures and PhotoluminescenceEuropean Science Review2021Цитирований: 0
ABI
DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS
Shakhrukh Kh. Daliev, Javokhir A. Ergashev
СтатьяSilicon Nanostructures and PhotoluminescenceEuropean Science Review2022Цитирований: 0
ABI
Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3
СтатьяIon-surface interactions and analysisEast European Journal of Physics2025Цитирований: 0
ABI
Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals
Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
ABI
Influence of Cooling Rate on Structural and Electrophysical Changes in Zirconium-Doped Silicon (Si + Zr)
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Шерзодбек Исмоилов
СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Independent Research Studies2025Цитирований: 0
ABI
Calculated Forbidden Bandgap of Si₃MnS Phase in Supercell (1Х1Х3) and Experimentally Determined Forbidden Bandgap of Si<MnS>
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, A.Sh. Mavlyanov +1
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
ABI
Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
ABI