Raman Spectroscopy of Gamma-Irradiated Silicon Doped with Rhodium

This study explores how gamma-ray exposure and rhodium (Rh) impurities affect the crystal structure of silicon using Raman spectroscopy. The introduction of rhodium into silicon single crystals causes subtle structural modifications and leads to the emergence of additional features in the Raman spectra. Specifically, the intensity of the characteristic silicon peak at 521 cm⁻¹ increases, while its full width at half maximum (FWHM) remains nearly constant. This enhanced peak intensity is likely a result of stronger bonding within the silicon lattice caused by Rh incorporation. Additionally, the new Raman signal observed at 245 cm⁻¹ in the Si<Rh> spectra is attributed to the presence of elemental rhodium and the formation of RhSi compounds. Further, irradiation of n-Si with gamma-rays with an energy of 1.25 MeV, a dose of 107 rad leads to disruption and amorphization of the silicon crystal structure and to the creation of radiation vacancy defects. The results of irradiation of doped samples show that the introduction of rhodium atoms leads to a decrease in the amorphous part of silicon and to an improvement in the crystalline structure.

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