Javokhir A. Ergashev

Работ: 1

Research Institute of semiconductor physics and microelectronics

1. DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS

   Shakhrukh Kh. Daliev, Javokhir A. Ergashev

   СтатьяSilicon Nanostructures and PhotoluminescenceEuropean Science Review2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.007542