Study of a solar cell with a silicon-based photodiode structure
Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanKh.S. DalievBranch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, UzbekistanShakhrukh Kh. DalievInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanS. A. MuzafarovaInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanKakhramon FayzullaevInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanGulnoza A. MuzafarovaInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
This article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers. The results of studies aimed at creating Au-nCdS-nSi- pCdTe-Au photodiode structures for the spectral range of 1.0-1.4 microns with an area of 29 mm 2 , which were obtained by vacuum evaporation in a quasi-closed volume of sputtering layers of cadmium sulfide and cadmium telluride, are presented. onto a silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au - nCdS-nSi - pCdTe - Au structures are two-way sensitive and have a low capacitance value of C = 23.3 pF at room temperature.
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