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Advanced Semiconductor Detectors and Materials

Работ: 335

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2013Цитирований: 19
    ABI

  2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  3. Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD

    T.M. Razykov, G. Contreras‐Puente, Ganna Chornokur +15

    СтатьяChalcogenide Semiconductor Thin FilmsSolar Energy2008Цитирований: 14
    ABI

  4. Growth and characterization of Sb2Se3 thin films for solar cells

    T.M. Razykov, A.X. Shukurov, O.K. Atabayev +3

    СтатьяChalcogenide Semiconductor Thin FilmsSolar Energy2018Цитирований: 13
    ABI

  5. Optical properties of polycrystalline films of lead telluride with distributed stichiometry

    T. Kh. Akhmedov, Otajonov Salim, Ya Usmonov +3

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Physics Conference Series2021Цитирований: 12
    ABI

  6. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2023Цитирований: 12
    ABI

  7. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2019Цитирований: 12
    ABI

  8. Defect Formation on the Surface of ZnO Using Low-Energy Electrons

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov

    СтатьяZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 11
    ABI

  9. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11
    ABI

  10. Influence temperature and strong magnetic field on oscillations of density of energy states in heterostructures with quantum wells Hgcdte/Cdhgte

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    СтатьяSemiconductor Quantum Structures and DevicesE3S Web of Conferences2023Цитирований: 10
    ABI

  11. Temperature dependence of width band gap in <i>In<sub>x</sub>ga<sub>1-X</sub>as</i>quantum well in presence of transverse strong magnetic field

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    СтатьяSemiconductor Quantum Structures and DevicesE3S Web of Conferences2023Цитирований: 10
    ABI

  12. Research of the semiconductor sensors based on anomal photovoltaic effect with highly sensitive parameters of the deformation

    Odinakhon Rayimdjanova, F. Mukhtarov, Ma’murjon Ismoilov +3

    СтатьяCalibration and Measurement TechniquesE3S Web of Conferences2024Цитирований: 10
    ABI

  13. Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +2

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2014Цитирований: 10
    ABI

  14. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2016Цитирований: 10
    ABI

  15. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    СтатьяThermography and Photoacoustic TechniquesInorganic Materials2014Цитирований: 9
    ABI

  16. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
    ABI

  17. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
    ABI

  18. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  19. The Temperature Dependence of the Density of States in Semiconductors

    G. Gulyamov, Nosir Yusupjanovich Sharibaev, Ulugbek Inoyatillaevich Erkaboev

    СтатьяAdvanced Semiconductor Detectors and MaterialsWorld Journal of Condensed Matter Physics2013Цитирований: 9
    ABI

  20. Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films

    Б. З. Полвонов, N. Kh. Yuldashev

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2016Цитирований: 9
    ABI

  21. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2010Цитирований: 8
    ABI

  22. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  23. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    СтатьяChalcogenide Semiconductor Thin FilmsInorganic Materials2020Цитирований: 8
    ABI

  24. Effective dielectric permeability and electrical conductivity of polycrystalline PbTe films with disturbed stochiometry

    T. Kh. Akhmedov, S.M. Otazhonov, M. M. Khalilov +3

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Physics Conference Series2021Цитирований: 8
    ABI

  25. Structure, morphology and properties of ZnS crystal irradiated by electrons of different fluences

    M. Yu. Tashmetov, Bakhtiyar Madaminov, N.B. Ismatov +2

    СтатьяQuantum Dots Synthesis And PropertiesInternational Journal of Modern Physics B2024Цитирований: 8
    ABI