Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques
Работ: 110
Журнал · ISSN 1027-4510
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21ABIStructure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14ABIApplying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 14ABIEffect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12ABIEstimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation
Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 12ABIKinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing
Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1
СтатьяElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 11ABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 8ABIOn the low-temperature photoluminescence and photovoltaic properties of fine-grained CdTe films
Bozorboy Joboralievich Akhmadaliev, Б. З. Полвонов, N. Kh. Yuldashev
СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2016Цитирований: 8ABIStudy of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film
Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5ABI