Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques
110 works
Journal · ISSN 1027-4510
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков
ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citationsABIStructure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 citationsABIApplying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 citationsABIEffect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citationsABIEstimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation
Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov
ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201112 citationsABIKinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing
Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1
ArticleElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201311 citationsABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 citationsABIOn the low-temperature photoluminescence and photovoltaic properties of fine-grained CdTe films
Bozorboy Joboralievich Akhmadaliev, Б. З. Полвонов, N. Kh. Yuldashev
ArticleAdvanced Semiconductor Detectors and MaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20168 citationsABIStudy of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film
Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 citationsABI