A. K. Tashatov
20 works
Tashkent State Technical University, Tashkent, 100095, Uzbekistan
Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film
Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 citationsABIOn new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon
А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3
ArticleSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20113 citationsABITheoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose
А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 citationsABIHigh-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions
А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 citationsABIEffect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface
G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citationsABIEffect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface
G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov
ArticleIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citationsABI