Article

Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

А.С. РысбаевKarimov Tashkent State Technical University, 100095, Tashkent, UzbekistanJ. B. KhujaniyozovKarimov Tashkent State Technical University, 100095, Tashkent, UzbekistanM.T. NormuradovKarshi State University, 180103, Karshi, UzbekistanA. K. TashatovKarshi State University, 180103, Karshi, UzbekistanБ.Д. ИгамовKarimov Tashkent State Technical University, 100095, Tashkent, UzbekistanS. T. AbraevaKarimov Tashkent State Technical University, 100095, Tashkent, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2020en

ABI

Abstract

Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose of D > 1016 cm–2 is presented in this paper. On the basis of a two-fluid model of the electron gas, the observed effect of a decrease in the Si(111) plasmon energy is explained by the strong damping of valence electron oscillations because of disordering of the Si(111) crystal structure up to full amorphization.

Topics

Ion-surface interactions and analysis Electron and X-Ray Spectroscopy Techniques Integrated Circuits and Semiconductor Failure Analysis

Identifiers

DOI: 10.1134/s102745102004031x

Citations and references

Cited by 3 1 references

Metrics — AkademScholar · Coming soon