J. B. Khujaniyozov
6 works
Tashkent State Technical University, Tashkent, 100095, Uzbekistan
Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citationsABITheoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose
А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 citationsABIStructure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons
M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1
ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 citationsABIOn the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2
ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 citationsABI