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I. R. Bekpulatov

45 works

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    ArticleSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 citations
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 citations
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesModern Physics Letters B202317 citations
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  6. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 citations
    ABI

  7. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  9. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    ArticleSurface Roughness and Optical MeasurementsIntegrated ferroelectrics202412 citations
    ABI

  10. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    ArticleAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations20249 citations
    ABI

  11. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  12. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20239 citations
    ABI

  13. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    ArticleX-ray Diffraction in CrystallographyJournal of Crystal Growth20248 citations
    ABI

  14. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    ArticleSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 citations
    ABI

  15. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

    K.T. Dovranov, Muradulla Normuradov, Kh.T. Davranov +1

    ArticleSemiconductor materials and interfacesUkrainian Journal of Physics20246 citations
    ABI

  16. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    ArticleAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 citations
    ABI

  17. Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence

    I. R. Bekpulatov, Gunel Imanova, D.Kh. Nabiev +4

    ArticleSemiconductor materials and interfacesCeramics International20255 citations
    ABI

  18. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    ArticleSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 citations
    ABI

  19. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    ArticleSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering20254 citations
    ABI

  20. Surface evaluation of carbonitride coating materials at high temperature: an investigation of oxygen adsorption on crystal surfaces by molecular dynamics simulation

    M.N. Mirzayev, Gunel Imanova, D. Neov +12

    ArticleMetal and Thin Film MechanicsJournal of Porous Materials20244 citations
    ABI

  21. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    ArticleChalcogenide Semiconductor Thin FilmsOptical Materials X20244 citations
    ABI

  22. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfacesMaterials Research Innovations20243 citations
    ABI

  23. Influence of electron irradiation on the band gap and microhardness of TlInS <sub>2</sub> , TlInSSe and TlIn <sub>0.99</sub> Cr <sub>0.01</sub> S <sub>2</sub> single crystals

    F. K. Khallokov, Gunel Imanova, S. Kh. Umarov +4

    ArticleSolid-state spectroscopy and crystallographyMaterials Research Innovations20243 citations
    ABI

  24. Influence of preliminary ion bombardment on the formation of Co and CoSi-=SUB=-2-=/SUB=- nanofilms on Si surface during solid-phase deposition

    Turapov I. Kh., I. R. Bekpulatov, A. Q. Tashatov +1

    ArticleIon-surface interactions and analysisПисьма в журнал технической физики20223 citations
    ABI

  25. Influence of implantation of O2+ ions on the composition and electronic structure of the W(111) surface

    З. А. Исаханов, Б. Е. Умирзаков, D.Kh. Nabiev +5

    ArticleTransition Metal Oxide NanomaterialsMicro and Nano Systems Letters20242 citations
    ABI