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V. V. Klechkovskaya

19 works

Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Research Center, Russian Academy of Sciences, 119333, Moscow, Russia

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    ArticleSemiconductor materials and interfacesNanotechnologies in Russia20167 citations
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20114 citations
    ABI

  5. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 citations
    ABI

  6. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    ArticleSemiconductor materials and interfaces20053 citations
    ABI

  7. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    ArticleSemiconductor materials and interfacesTechnical Physics20052 citations
    ABI

  8. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20102 citations
    ABI

  9. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20132 citations
    ABI

  10. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    ArticleAdvanced Thermoelectric Materials and Devices20041 citations
    ABI

  11. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    ArticleSemiconductor materials and interfaces20051 citations
    ABI

  12. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20131 citations
    ABI

  13. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    ArticleSemiconductor materials and interfaces20060 citations
    ABI

  14. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    ArticleSemiconductor materials and interfaces20060 citations
    ABI

  15. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    ArticleSemiconductor materials and interfaces20100 citations
    ABI

  16. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 citations
    ABI

  17. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20110 citations
    ABI

  18. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    ArticleSemiconductor materials and interfacesCrystallography Reports20240 citations
    ABI

  19. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

    М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

    ArticleSemiconductor materials and interfacesКристаллография20240 citations
    ABI