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V. V. Klechkovskaya

Работ: 19

Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Research Center, Russian Academy of Sciences, 119333, Moscow, Russia

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4
    ABI

  5. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2018Цитирований: 3
    ABI

  6. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    СтатьяSemiconductor materials and interfaces2005Цитирований: 3
    ABI

  7. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    СтатьяSemiconductor materials and interfacesTechnical Physics2005Цитирований: 2
    ABI

  8. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2
    ABI

  9. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 2
    ABI

  10. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 1
    ABI

  11. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    СтатьяSemiconductor materials and interfaces2005Цитирований: 1
    ABI

  12. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 1
    ABI

  13. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    СтатьяSemiconductor materials and interfaces2006Цитирований: 0
    ABI

  14. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    СтатьяSemiconductor materials and interfaces2006Цитирований: 0
    ABI

  15. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    СтатьяSemiconductor materials and interfaces2010Цитирований: 0
    ABI

  16. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2010Цитирований: 0
    ABI

  17. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2011Цитирований: 0
    ABI

  18. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    СтатьяSemiconductor materials and interfacesCrystallography Reports2024Цитирований: 0
    ABI

  19. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

    М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

    СтатьяSemiconductor materials and interfacesКристаллография2024Цитирований: 0
    ABI