B.V. Ibragimova

Работ: 4

Tashkent State Technical University, Tashkent, Uzbekistan

1. Obtaining higher manganese silicide films with high thermoelectric properties

   I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.253378

2. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.199258

3. Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

   Abdumalik Gaibov, Kutbiddin Ilovitddinovich Vakhobov, B.V. Ibragimova +2

   Статья3D IC and TSV technologiesMaterials science forum2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2022.article.001975

4. Growing Sb2Se3 Films Enriched with Selenium Using Chemical Molecular Beam Deposition

   Takhirdjon M. Razikov, S. A. Muzafarova, R. T. Yuldoshov +4

   СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002936