Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseскороОткрытый API экосистемы
Латиница
Русский

Semiconductors

Работ: 118

Журнал · ISSN 1063-7826

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2013Цитирований: 19
    ABI

  2. Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4

    M. K. Bakhadirkhanov, K. S. Ayupov, G. H. Mavlyanov +1

    СтатьяMagneto-Optical Properties and ApplicationsSemiconductors2010Цитирований: 18
    ABI

  3. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    СтатьяQuantum and electron transport phenomenaSemiconductors2014Цитирований: 16
    ABI

  4. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
    ABI

  5. Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

    G. Gulyamov, N. Yu. Sharibaev

    СтатьяSurface and Thin Film PhenomenaSemiconductors2011Цитирований: 10
    ABI

  6. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    СтатьяOptical Polarization and EllipsometrySemiconductors2015Цитирований: 10
    ABI

  7. Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films

    Б. З. Полвонов, N. Kh. Yuldashev

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2016Цитирований: 9
    ABI

  8. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
    ABI

  9. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2010Цитирований: 8
    ABI

  10. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSemiconductor materials and interfacesSemiconductors2021Цитирований: 8
    ABI

  11. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8
    ABI

  12. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    L. O. Olimov

    СтатьяThin-Film Transistor TechnologiesSemiconductors2010Цитирований: 8
    ABI

  13. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  14. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    СтатьяMechanical and Optical ResonatorsSemiconductors2019Цитирований: 7
    ABI

  15. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2012Цитирований: 7
    ABI

  16. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    СтатьяMagnetic Properties and ApplicationsSemiconductors2014Цитирований: 7
    ABI

  17. Two- and Three-Photon Linear-Circular Dichroism in Cubic-Symmetry Semiconductors

    Rustam Yavkachovich Rasulov, Ravshan Rustamovich Sultonov, Bahodir Bahromovich Akhmedov

    СтатьяNonlinear Optical Materials StudiesSemiconductors2020Цитирований: 6
    ABI

  18. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5
    ABI

  19. Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    СтатьяAdvanced Thermoelectric Materials and DevicesSemiconductors2000Цитирований: 5
    ABI

  20. Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    СтатьяElectromagnetic Effects on MaterialsSemiconductors2000Цитирований: 5
    ABI

  21. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5
    ABI

  22. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2009Цитирований: 5
    ABI

  23. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяElectromagnetic Effects on MaterialsSemiconductors2011Цитирований: 5
    ABI

  24. Linear photovoltaic effect in gyrotropic crystals

    Rustam Yavkachovich Rasulov, Yu. E. Salenko, D. Kambarov

    СтатьяSolid-state spectroscopy and crystallographySemiconductors2002Цитирований: 4
    ABI

  25. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    СтатьяSemiconductor materials and interfacesSemiconductors1999Цитирований: 4
    ABI