Статья

Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating

G. GulyamovNamangan Engineering-Pedagogical Institute, Namangan, 716003, UzbekistanМ. Г. ДадамирзаевNamangan Engineering-Pedagogical Institute, Namangan, 716003, UzbekistanS. R. BoĭdedaevNamangan Engineering-Pedagogical Institute, Namangan, 716003, Uzbekistan

Semiconductorsjournal2000en

ABI

Аннотация

The lattice heating effect on the kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction is theoretically studied. It is shown that lattice heating leads to an additional third stage in the process of attaining the steady state in thermal currents and the thermoelectric power of hot carriers with a relaxation time determined by the thermal conductivity and heat capacity of the sample. It is also shown that the relaxation rate of the third stage is lower in comparison with stages I and II observed by Veinger and Sargsyans.

Темы

Advanced Thermoelectric Materials and Devices Thermodynamic and Structural Properties of Metals and Alloys Thermography and Photoacoustic Techniques

Идентификаторы

DOI: 10.1134/1.1187967

Цитирования и источники

Цитирований: 5Использованных источников: 0

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