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Surface and Thin Film Phenomena

Работ: 232

  1. A gossypol derivative as an efficient corrosion inhibitor for St2 steel in 1 M HCl + 1 M KCl: An experimental and theoretical investigation

    Elyor Berdimurodov, Abduvali Kholikov, Khamdam Akbarov +3

    СтатьяCorrosion Behavior and InhibitionJournal of Molecular Liquids2021Цитирований: 33
    ABI

  2. Novel gossypol–indole modification as a green corrosion inhibitor for low–carbon steel in aggressive alkaline–saline solution

    Elyor Berdimurodov, Abduvali Kholikov, Khamdam Akbarov +7

    СтатьяCorrosion Behavior and InhibitionColloids and Surfaces A Physicochemical and Engineering Aspects2022Цитирований: 19
    ABI

  3. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesModern Physics Letters B2023Цитирований: 17
    ABI

  4. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    СтатьяSurface Roughness and Optical MeasurementsIntegrated ferroelectrics2024Цитирований: 12
    ABI

  5. The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    СтатьяSurface and Thin Film PhenomenaModern Physics Letters B2016Цитирований: 11
    ABI

  6. Calculation of the Fermi–Dirac Function Distribution in Two-Dimensional Semiconductor Materials at High Temperatures and Weak Magnetic Fields

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +2

    СтатьяSurface and Thin Film PhenomenaNANO2021Цитирований: 11
    ABI

  7. Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

    G. Gulyamov, N. Yu. Sharibaev

    СтатьяSurface and Thin Film PhenomenaSemiconductors2011Цитирований: 10
    ABI

  8. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8
    ABI

  9. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7
    ABI

  10. Investigation Ne ions scattering from the stepped InP(001)<ī10> surface

    U O Kutliev, M. U. Otabaev, М. K. Kаrimov

    СтатьяIon-surface interactions and analysisJournal of Physics Conference Series2022Цитирований: 7
    ABI

  11. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    СтатьяMagnetic Properties and ApplicationsSemiconductors2014Цитирований: 7
    ABI

  12. Calculation of the energy levels and wave functions of electrons in nanowires by the shooting method

    G. Gulyamov, A. B. Davlatov, Sh. T. Inoyatov +1

    СтатьяSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)2021Цитирований: 6
    ABI

  13. To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers

    Rustam Yavkachovich Rasulov

    СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal2017Цитирований: 5
    ABI

  14. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    СтатьяMagnetic properties of thin filmsJournal of Nano- and Electronic Physics2023Цитирований: 5
    ABI

  15. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5
    ABI

  16. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    СтатьяSemiconductor materials and interfacesPhysics and Chemistry of Solid State2024Цитирований: 5
    ABI

  17. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

    Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2015Цитирований: 5
    ABI

  18. Energy band diagrams, of Cu2SZnXCd1−xS(0 ≦ x ≦ 1) heterojunctions

    T.M. Razykov, B. Kh. Kadirov

    СтатьяSemiconductor materials and interfacesphysica status solidi (a)1984Цитирований: 4
    ABI

  19. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    СтатьяSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 3
    ABI

  20. Electrophysical properties of the “nano-object-semiconductor” new contact structure

    E. Z. Imamov, T. A. Dzhalalov, Р. А. Муминов

    СтатьяForce Microscopy Techniques and ApplicationsTechnical Physics2015Цитирований: 3
    ABI

  21. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  22. Low energy ion scattering by atomic steps on the single crystal surface

    A.A. Dzhurakhalov, Uchkun Kutliev, F. F. Umarov

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2004Цитирований: 3
    ABI

  23. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    СтатьяSurface and Thin Film PhenomenaTechnical Physics2019Цитирований: 3
    ABI

  24. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    СтатьяSemiconductor materials and interfaces2005Цитирований: 3
    ABI

  25. Complex Phenomena in Nanoscale Systems

    Giulio Casati, Davron Matrasulov

    КнигаSurface and Thin Film PhenomenaNATO science for peace and security series. B, Physics and biophysics2009Цитирований: 2
    ABI