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Andrey Orekhov

Работ: 13

A.V. Shubnikov Institute of Crystallography

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4
    ABI

  5. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2018Цитирований: 3
    ABI

  6. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    СтатьяSemiconductor materials and interfaces2005Цитирований: 3
    ABI

  7. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2
    ABI

  8. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    СтатьяSemiconductor materials and interfaces2006Цитирований: 0
    ABI

  9. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    СтатьяSemiconductor materials and interfaces2006Цитирований: 0
    ABI

  10. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    ГлаваSemiconductor materials and interfaces2008Цитирований: 0
    ABI

  11. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    СтатьяSemiconductor materials and interfaces2010Цитирований: 0
    ABI

  12. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2011Цитирований: 0
    ABI

  13. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    СтатьяSemiconductor materials and interfacesCrystallography Reports2024Цитирований: 0
    ABI