Anton S. Orekhov

Работ: 3

National Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.079735

2. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

   D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

   СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000566

3. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

   М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

   СтатьяSemiconductor materials and interfacesКристаллография2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008195