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T. S. Kamilov

Работ: 28

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  3. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
    ABI

  4. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    СтатьяX-ray Diffraction in CrystallographyJournal of Crystal Growth2024Цитирований: 8
    ABI

  5. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7
    ABI

  6. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5
    ABI

  7. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4
    ABI

  8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2018Цитирований: 3
    ABI

  9. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    СтатьяSemiconductor materials and interfaces2005Цитирований: 3
    ABI

  10. Role of the silicon dioxide in formation of higher manganese silicide films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3

    СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 2
    ABI

  11. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 2
    ABI

  12. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    СтатьяSemiconductor materials and interfacesTechnical Physics2005Цитирований: 2
    ABI

  13. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2
    ABI

  14. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 2
    ABI

  15. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 1
    ABI

  16. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 1
    ABI

  17. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

    СтатьяSemiconductor materials and interfaces2005Цитирований: 1
    ABI

  18. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2015Цитирований: 1
    ABI

  19. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    СтатьяSemiconductor materials and interfaces2005Цитирований: 1
    ABI

  20. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 1
    ABI

  21. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    СтатьяSemiconductor materials and interfaces2006Цитирований: 0
    ABI

  22. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    СтатьяSemiconductor materials and interfaces2006Цитирований: 0
    ABI

  23. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    ГлаваSemiconductor materials and interfaces2008Цитирований: 0
    ABI

  24. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    СтатьяSemiconductor materials and interfaces2010Цитирований: 0
    ABI

  25. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2010Цитирований: 0
    ABI