Formation of higher manganese silicide films on silicon
T. S. KamilovTashkent State Aviation Institute, Tashkent, 700047, UzbekistanD.K. KabilovTashkent State Aviation Institute, Tashkent, 700047, UzbekistanI.S. SamievTashkent State Aviation Institute, Tashkent, 700047, UzbekistanKh. Kh. KhusnutdinovaTashkent State Aviation Institute, Tashkent, 700047, UzbekistanР. А. МуминовPhysicotechnical Institute, Physics-Sun Research and Production Corporation, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanV. V. KlechkovskayaShubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333, Russia
ABI
Аннотация
The formation of higher manganese silicide (HMS) films on silicon and the properties of the silicide-silicon interface are studied. Morphology analysis of the surface and thin transition layer at the HMS-Si interface suggests that the growth of HMS films by the method of Mn reactive diffusion follows the vapor-liquid-crystal mechanism.
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