D.K. Kabilov

Работ: 9

Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, 33 F Hodzhaev st., Tashkent 700143, Uzbekistan

Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures
T. S. Kamilov, V. P. Chirva, D.K. Kabilov
СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
ABI
About the mechanism of formation and growth of the higher manganese silicide films on silicon
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6
СтатьяSemiconductor materials and interfaces2005Цитирований: 3
ABI
Role of the silicon dioxide in formation of higher manganese silicide films
T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3
СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 2
ABI
Formation of higher manganese silicide films on silicon
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3
СтатьяSemiconductor materials and interfacesTechnical Physics2005Цитирований: 2
ABI
Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films
T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5
СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 1
ABI
The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2
СтатьяSemiconductor materials and interfaces2005Цитирований: 1
ABI
Growth technique and structural properties of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3
СтатьяSemiconductor materials and interfaces2005Цитирований: 1
ABI
Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films
T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4
СтатьяSemiconductor materials and interfaces2006Цитирований: 0
ABI
About the Interface Between the Higher Manganese Silicide Film and Si (111)
T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5
СтатьяSemiconductor materials and interfaces2006Цитирований: 0
ABI