About the Interface Between the Higher Manganese Silicide Film and Si (111)
T. S. KamilovTashkent State Aviation Institute, Tashkent, UzbekistanD.K. KabilovTashkent State Aviation InstS.Kh. BabadjanovTashkent Institute Textile and Light Industry, Tashkent, UzbekistanR.Kh. KamilovaTashkent State Aviation Institute, Tashkent, UzbekistanM.E. AzimovKokan State Pedagogical Institute, Kokan, UzbekistanV. V. KlechkovskayaShubnikov institute of Crystallography, Moscow, RussiaAndrey OrekhovShubnikov institute of Crystallography, Moscow, RussiaElena I. SuvorovaShubnikov institute of Crystallography, Moscow, Russia
2006en
ABI
Аннотация
The higher manganese silicide (HMS) films were grown in a high-vacuum reactor temperature as a result of interaction of Mn vapour with Si-substrate subsurface layer at the substrate temperature ~ 1040degC. The films have been investigated by electron diffraction and transmission electron microscopy. It was shown that the higher manganese silicide grains were formed at the substrate surface and they grew in lower direction from initial substrate. After 2 mum in lower direction from the films surface the polycrystalline interlayer with thickness of 100-150 nm and cubic lattice (a=4,36Aring) was formed. At the interface between Si (111) single crystal and the HMS films thin amorphous layer was observed
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