Intermetallics and Advanced Alloy Properties

Работ: 167

Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films
M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
ABI
Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures
T. S. Kamilov, V. P. Chirva, D.K. Kabilov
СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
ABI
Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering
Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1
СтатьяSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series2023Цитирований: 7
ABI
The Effect of the Formation of Silicides on the Resistivity of Silicon
Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2019Цитирований: 5
ABI
Magnetic susceptibility of intermetallic compounds in the Er-In system at high temperatures
H. O. Shakarov
СтатьяRare-earth and actinide compoundsRussian Physics Journal2004Цитирований: 4
ABI
Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer
Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7
СтатьяSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering2025Цитирований: 4
ABI
Study of the Mobility and Electrical Conductivity of Chromium Silicide
M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 3
ABI
The Structure of the Ordered Phase in Rocksalt Type Titanium Carbide, Carbidenitride, and Carbidehydride
В. Т. Эм, M. Yu. Tashmetov
СтатьяMetal and Thin Film Mechanicsphysica status solidi (b)1996Цитирований: 3
ABI
High-Temperature Thermal Conductivity of SAV-1 Aluminum Alloy
I. Kh. Abdukadyrova, Sh. A. Alikulov, Farkhad Akhmedzhanov +3
СтатьяIntermetallics and Advanced Alloy PropertiesAtomic Energy2014Цитирований: 2
ABI
Neutron diffraction study of titanium carbide TiC x prepared from hydrogen-containing titanium powder
I. Khidirov
СтатьяAdvanced materials and compositesRussian Journal of Inorganic Chemistry2015Цитирований: 2
ABI
Neutron diffraction study of the Ti<sub>1-x</sub>Mo<sub>x</sub>C alloy
I. Khidirov, S. J. Rakhmanov, A. S. Parpiev
СтатьяMetal and Thin Film MechanicsJournal of Physics Conference Series2022Цитирований: 2
ABI
Raman and IR Spectrum Analysis of CrSi2 Thin Films Formed in Direct Current and Variable Frequency Modes of a Magnetron Sputtering Device
K.T. Dovranov, Maksim Vinnichenko, V.V. Korablev +3
СтатьяChalcogenide Semiconductor Thin Films2024Цитирований: 2
ABI
Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes
О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov
СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 2
ABI
Obtaining manganese silicide films on a silicon substrate by the diffusion method
N. F. Zikrillayev, M. M. Shoabdurahimova, T. Kamilov +4
СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2022Цитирований: 2
ABI
Magnetic properties of intermetallic REM-TM systems at high temperatures
O. K. Kuvandikov, H. O. Shakarov, М. К. Салахитдинова
СтатьяIntermetallics and Advanced Alloy PropertiesUzbekiston Fizika Zhurnali2001Цитирований: 1
ABI
Diffusion of europium in silicon
D. É. Nazyrov
СтатьяAdvanced Materials Characterization TechniquesSemiconductors2003Цитирований: 1
ABI
The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2
СтатьяSemiconductor materials and interfaces2005Цитирований: 1
ABI
Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures
Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2
СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 1
ABI
The Hexagonal Close-Packed (HCP) ⇆ Face-Centered Cubic (FCC) Transition in Co-Re-Based Experimental Alloys Investigated by Neutron Scattering
D. Mukherji, Pavel Strunz, Sebastian Piegert +4
СтатьяHigh Temperature Alloys and CreepMetallurgical and Materials Transactions A2012Цитирований: 1
ABI
Neutron diffraction study of the formation kinetics of ordered antiphase domains in titanium carbohydride TiC x H y
I. Khidirov
СтатьяX-ray Diffraction in CrystallographyCrystallography Reports2015Цитирований: 1
ABI
Silicon with Binary GexSi1 – x Compounds
Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3
СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
ABI
Development of a technique for the formation of Ti-Al system compounds under the influence of high pressures and temperatures
Sherzod Fayzibayev, Oleg Ignotenko, Sherali Mamayev +2
СтатьяIntermetallics and Advanced Alloy PropertiesAIP conference proceedings2024Цитирований: 1
ABI
Neutron Diffraction Study of the Phase Transformations in Titanium Carbohydride TiC0.50Hy
I. Khidirov, S. J. Rakhmanov
СтатьяAdvanced materials and compositesCrystallography Reports2018Цитирований: 1
ABI
Nanoindentation Characterization of Mechanically Alloyed Fe-Al-Si Powders
Petr Haušild, Jaroslav Čech, Miroslav Karlı́k +3
СтатьяIntermetallics and Advanced Alloy PropertiesKey engineering materials2018Цитирований: 1
ABI
An adsorption mechanism underlying phase transformation in stabilized zirconia
V. I. Alekseenko, Г. К. Волкова
СтатьяAdvanced ceramic materials synthesisTechnical Physics2000Цитирований: 1
ABI