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G. Kh. Allayarova

Работ: 8

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2019Цитирований: 12
    ABI

  2. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    СтатьяTransition Metal Oxide NanomaterialsTechnical Physics2020Цитирований: 6
    ABI

  3. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2019Цитирований: 5
    ABI

  4. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

    Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2020Цитирований: 4
    ABI

  5. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

    G. Kh. Allayarova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 2
    ABI

  6. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

    СтатьяTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 0
    ABI

  7. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  8. Effect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
    ABI