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А.С. Рысбаев

Работ: 19

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  2. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  4. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  5. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  6. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    СтатьяSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 3
    ABI

  7. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2018Цитирований: 3
    ABI

  9. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

    А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2019Цитирований: 2
    ABI

  10. Thin silicide films: producing and properties

    А.С. Рысбаев, S. S. Nasriddinov, Yu. Yu. Yuldashev +4

    СтатьяSemiconductor materials and interfaces2004Цитирований: 2
    ABI

  11. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1
    ABI

  12. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  13. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysis1999Цитирований: 0
    ABI

  14. About silicide production in silicon during implantation of barium and alkali ions

    А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

    СтатьяSemiconductor materials and interfaces1999Цитирований: 0
    ABI

  15. Low energy electron and photoelectron spectroscopy of Si(111) surface implanted by P + and B + ions

    А.С. Рысбаев, A. K. Tashatov

    СтатьяElectron and X-Ray Spectroscopy Techniques1999Цитирований: 0
    ABI

  16. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    СтатьяSilicon and Solar Cell Technologies1999Цитирований: 0
    ABI

  17. Modification of structure and properties of semiconductor surface by ion implantation with active metals

    А.С. Рысбаев, Sh.H. Djuraev, A.M. Rahimov +2

    СтатьяMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali2000Цитирований: 0
    ABI

  18. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

    I. R. Bekpulatov, А.С. Рысбаев, Sh.Kh. Dzhuraev +1

    СтатьяSilicon and Solar Cell TechnologiesEurasian journal of physics and functional materials2018Цитирований: 0
    ABI

  19. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

    А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2020Цитирований: 0
    ABI