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А.С. Рысбаев

19 та иш

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  2. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 иқтибос
    ABI

  3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос
    ABI

  4. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  5. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20149 иқтибос
    ABI

  6. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    МақолаSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20113 иқтибос
    ABI

  7. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 иқтибос
    ABI

  8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 иқтибос
    ABI

  9. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

    А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

    МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 иқтибос
    ABI

  10. Thin silicide films: producing and properties

    А.С. Рысбаев, S. S. Nasriddinov, Yu. Yu. Yuldashev +4

    МақолаSemiconductor materials and interfaces20042 иқтибос
    ABI

  11. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 иқтибос
    ABI

  12. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  13. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysis19990 иқтибос
    ABI

  14. About silicide production in silicon during implantation of barium and alkali ions

    А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

    МақолаSemiconductor materials and interfaces19990 иқтибос
    ABI

  15. Low energy electron and photoelectron spectroscopy of Si(111) surface implanted by P + and B + ions

    А.С. Рысбаев, A. K. Tashatov

    МақолаElectron and X-Ray Spectroscopy Techniques19990 иқтибос
    ABI

  16. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    МақолаSilicon and Solar Cell Technologies19990 иқтибос
    ABI

  17. Modification of structure and properties of semiconductor surface by ion implantation with active metals

    А.С. Рысбаев, Sh.H. Djuraev, A.M. Rahimov +2

    МақолаMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20000 иқтибос
    ABI

  18. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

    I. R. Bekpulatov, А.С. Рысбаев, Sh.Kh. Dzhuraev +1

    МақолаSilicon and Solar Cell TechnologiesEurasian journal of physics and functional materials20180 иқтибос
    ABI

  19. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

    А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3

    МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20200 иқтибос
    ABI