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T. S. Kamilov

28 та иш

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    МақолаSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 иқтибос
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  3. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    МақолаSemiconductor materials and interfacesSemiconductor Science and Technology199911 иқтибос
    ABI

  4. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    МақолаX-ray Diffraction in CrystallographyJournal of Crystal Growth20248 иқтибос
    ABI

  5. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос
    ABI

  6. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    МақолаSemiconductor materials and interfacesSemiconductors20175 иқтибос
    ABI

  7. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20114 иқтибос
    ABI

  8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 иқтибос
    ABI

  9. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    МақолаSemiconductor materials and interfaces20053 иқтибос
    ABI

  10. Role of the silicon dioxide in formation of higher manganese silicide films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3

    МақолаAdvanced Thermoelectric Materials and Devices20042 иқтибос
    ABI

  11. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    МақолаSemiconductor materials and interfacesTechnical Physics20142 иқтибос
    ABI

  12. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    МақолаSemiconductor materials and interfacesTechnical Physics20052 иқтибос
    ABI

  13. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20102 иқтибос
    ABI

  14. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesTechnical Physics20132 иқтибос
    ABI

  15. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20021 иқтибос
    ABI

  16. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    МақолаAdvanced Thermoelectric Materials and Devices20041 иқтибос
    ABI

  17. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

    МақолаSemiconductor materials and interfaces20051 иқтибос
    ABI

  18. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesSemiconductors20151 иқтибос
    ABI

  19. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    МақолаSemiconductor materials and interfaces20051 иқтибос
    ABI

  20. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesTechnical Physics20131 иқтибос
    ABI

  21. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    МақолаSemiconductor materials and interfaces20060 иқтибос
    ABI

  22. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    МақолаSemiconductor materials and interfaces20060 иқтибос
    ABI

  23. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    БобSemiconductor materials and interfaces20080 иқтибос
    ABI

  24. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    МақолаSemiconductor materials and interfaces20100 иқтибос
    ABI

  25. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 иқтибос
    ABI