Мақола

Formation of higher manganese silicide films on silicon

T. S. KamilovTashkent State Aviation Institute, Tashkent, 700047, UzbekistanD.K. KabilovTashkent State Aviation Institute, Tashkent, 700047, UzbekistanI.S. SamievTashkent State Aviation Institute, Tashkent, 700047, UzbekistanKh. Kh. KhusnutdinovaTashkent State Aviation Institute, Tashkent, 700047, UzbekistanР. А. МуминовPhysicotechnical Institute, Physics-Sun Research and Production Corporation, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanV. V. KlechkovskayaShubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333, Russia

Technical Physicsjournal2005en

ABI

Аннотация

The formation of higher manganese silicide (HMS) films on silicon and the properties of the silicide-silicon interface are studied. Morphology analysis of the surface and thin transition layer at the HMS-Si interface suggests that the growth of HMS films by the method of Mn reactive diffusion follows the vapor-liquid-crystal mechanism.

Мавзулар

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Force Microscopy Techniques and Applications

Идентификаторлар

DOI: 10.1134/1.2014547

Иқтибослар ва манбалар

2 та иқтибос 6 та фойдаланилган манба

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