D.K. Kabilov

9 та иш

Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, 33 F Hodzhaev st., Tashkent 700143, Uzbekistan

Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures
T. S. Kamilov, V. P. Chirva, D.K. Kabilov
МақолаSemiconductor materials and interfacesSemiconductor Science and Technology199911 иқтибос
ABI
About the mechanism of formation and growth of the higher manganese silicide films on silicon
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6
МақолаSemiconductor materials and interfaces20053 иқтибос
ABI
Role of the silicon dioxide in formation of higher manganese silicide films
T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3
МақолаAdvanced Thermoelectric Materials and Devices20042 иқтибос
ABI
Formation of higher manganese silicide films on silicon
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3
МақолаSemiconductor materials and interfacesTechnical Physics20052 иқтибос
ABI
Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films
T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5
МақолаAdvanced Thermoelectric Materials and Devices20041 иқтибос
ABI
The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2
МақолаSemiconductor materials and interfaces20051 иқтибос
ABI
Growth technique and structural properties of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3
МақолаSemiconductor materials and interfaces20051 иқтибос
ABI
Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films
T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4
МақолаSemiconductor materials and interfaces20060 иқтибос
ABI
About the Interface Between the Higher Manganese Silicide Film and Si (111)
T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5
МақолаSemiconductor materials and interfaces20060 иқтибос
ABI