Мақола

Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

T. S. KamilovTashkent State Institute of Aviation, 12 Akhunbabaev st., Tashkent 700047, UzbekistanV. P. ChirvaInstitute of Electronics, Academy of Sciences of the Republic of Uzbekistan, 33 F Hodzhaev st., Tashkent 700143, UzbekistanD.K. KabilovInstitute of Electronics, Academy of Sciences of the Republic of Uzbekistan, 33 F Hodzhaev st., Tashkent 700143, Uzbekistan

Semiconductor Science and Technologyjournal1999en

ABI

Аннотация

Photoelectric properties of (HMS)-SiMn-M structures, where HMS is higher manganese silicide formed in diffusion doping of silicon with manganese and M is metal contact, have been studied in a wide range of temperatures and light wavelengths.

Мавзулар

Semiconductor materials and interfaces Intermetallics and Advanced Alloy Properties Metallurgical and Alloy Processes

Идентификаторлар

DOI: 10.1088/0268-1242/14/11/312

Иқтибослар ва манбалар

11 та иқтибос 3 та фойдаланилган манба

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