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Semiconductor materials and interfaces

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  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос
    ABI

  2. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials201124 иқтибос
    ABI

  3. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    МақолаSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 иқтибос
    ABI

  4. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  5. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  6. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201319 иқтибос
    ABI

  7. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 иқтибос
    ABI

  8. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesModern Physics Letters B202317 иқтибос
    ABI

  9. Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

    T.M. Razykov, Ganjaboy S. Boltaev, A. Bosio +8

    МақолаChalcogenide Semiconductor Thin FilmsSolar Energy201716 иқтибос
    ABI

  10. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос
    ABI

  11. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос
    ABI

  12. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    МақолаSemiconductor materials and interfacesMaterials Science and Engineering B200314 иқтибос
    ABI

  13. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 иқтибос
    ABI

  14. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisTechnical Physics201814 иқтибос
    ABI

  15. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибос
    ABI

  16. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy200714 иқтибос
    ABI

  17. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос
    ABI

  18. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy201513 иқтибос
    ABI

  19. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 иқтибос
    ABI

  20. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    МақолаSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 иқтибос
    ABI

  21. Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201112 иқтибос
    ABI

  22. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    МақолаSemiconductor materials and interfacesApplied Solar Energy200712 иқтибос
    ABI

  23. Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics202411 иқтибос
    ABI

  24. The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    МақолаSurface and Thin Film PhenomenaModern Physics Letters B201611 иқтибос
    ABI

  25. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    МақолаSemiconductor materials and interfacesSemiconductor Science and Technology199911 иқтибос
    ABI