Semiconductor materials and interfaces
771 та иш
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков
МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибосABIStructure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибосABIInvestigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment
Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2
МақолаSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 иқтибосABIEstimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation
Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov
МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201112 иқтибосABI