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Ш. А. Мирсагатов

43 та иш

Physical-Technical Institute, Physics-Sun Research and Production Association, Uzbek Academy of Sciences, Tashkent, 100084, Uzbekistan

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors201319 иқтибос
    ABI

  2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос
    ABI

  3. A p-i-n Model of CdTe/CdS Heterostructures

    J. Janabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    МақолаQuantum Dots Synthesis And PropertiesInorganic Materials200511 иқтибос
    ABI

  4. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 иқтибос
    ABI

  5. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State200710 иқтибос
    ABI

  6. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    МақолаThermography and Photoacoustic TechniquesInorganic Materials20149 иқтибос
    ABI

  7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20108 иқтибос
    ABI

  8. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysics of the Solid State20158 иқтибос
    ABI

  9. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    МақолаChalcogenide Semiconductor Thin FilmsInorganic Materials20208 иқтибос
    ABI

  10. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 иқтибос
    ABI

  11. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 иқтибос
    ABI

  12. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    МақолаSemiconductor materials and interfacesInorganic Materials20145 иқтибос
    ABI

  13. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 иқтибос
    ABI

  14. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 иқтибос
    ABI

  15. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20144 иқтибос
    ABI

  16. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20143 иқтибос
    ABI

  17. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 иқтибос
    ABI

  18. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20083 иқтибос
    ABI

  19. High-efficiency UV photocells based on Zn x Cd1 − x S solid solutions

    Ш. А. Мирсагатов, Abdurashid Mavlonov

    Мақолаsolar cell performance optimizationApplied Solar Energy20122 иқтибос
    ABI

  20. The effect of γ radiation on the properties of p-n-p structures based on polycrystalline cadmium telluride

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters20032 иқтибос
    ABI

  21. The fabrication and investigation of n/CdS-p/CdTe-n/Si structures

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20111 иқтибос
    ABI

  22. Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels

    Ш. А. Мирсагатов, O. K. Ataboev, M. A. Makhmudov

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20111 иқтибос
    ABI

  23. Investigation of illuminance-voltage characteristics for thin-film D-CdTe-n-CdTe-n-CdS structures

    Ш. А. Мирсагатов, K.K. Sabirov

    МақолаChalcogenide Semiconductor Thin Filmsphysica status solidi (a)19850 иқтибос
    ABI

  24. Degradation processes in photosensitive structures on the basis of big-blocked p-CdTe polycrystals

    Ш. А. Мирсагатов, A.I. Sultanov, Makhmudov +2

    МақолаAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20010 иқтибос
    ABI

  25. Functional possibilities of photo receivers with controllable spectrum

    Ш. А. Мирсагатов, B. U. Aĭtbaev, Makhmudov +1

    МақолаInfrared Target Detection MethodologiesUzbekiston Fizika Zhurnali20010 иқтибос
    ABI