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B. U. Aĭtbaev

5 та иш

Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, Uzbekistan

  1. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 иқтибос
    ABI

  2. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20083 иқтибос
    ABI

  3. Degradation processes in photosensitive structures on the basis of big-blocked p-CdTe polycrystals

    Ш. А. Мирсагатов, A.I. Sultanov, Makhmudov +2

    МақолаAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20010 иқтибос
    ABI

  4. Functional possibilities of photo receivers with controllable spectrum

    Ш. А. Мирсагатов, B. U. Aĭtbaev, Makhmudov +1

    МақолаInfrared Target Detection MethodologiesUzbekiston Fizika Zhurnali20010 иқтибос
    ABI

  5. Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m

    S. A. Muzafarova, Ш. А. Мирсагатов, A. Yu. Leĭderman +2

    МақолаChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20090 иқтибос
    ABI