Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API

Advanced Semiconductor Detectors and Materials

335 та иш

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors201319 иқтибос
    ABI

  2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос
    ABI

  3. Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD

    T.M. Razykov, G. Contreras‐Puente, Ganna Chornokur +15

    МақолаChalcogenide Semiconductor Thin FilmsSolar Energy200814 иқтибос
    ABI

  4. Growth and characterization of Sb2Se3 thin films for solar cells

    T.M. Razykov, A.X. Shukurov, O.K. Atabayev +3

    МақолаChalcogenide Semiconductor Thin FilmsSolar Energy201813 иқтибос
    ABI

  5. Optical properties of polycrystalline films of lead telluride with distributed stichiometry

    T. Kh. Akhmedov, Otajonov Salim, Ya Usmonov +3

    МақолаAdvanced Thermoelectric Materials and DevicesJournal of Physics Conference Series202112 иқтибос
    ABI

  6. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    МақолаAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 иқтибос
    ABI

  7. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 иқтибос
    ABI

  8. Defect Formation on the Surface of ZnO Using Low-Energy Electrons

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov

    МақолаZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202011 иқтибос
    ABI

  9. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 иқтибос
    ABI

  10. Influence temperature and strong magnetic field on oscillations of density of energy states in heterostructures with quantum wells Hgcdte/Cdhgte

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    МақолаSemiconductor Quantum Structures and DevicesE3S Web of Conferences202310 иқтибос
    ABI

  11. Temperature dependence of width band gap in <i>In<sub>x</sub>ga<sub>1-X</sub>as</i>quantum well in presence of transverse strong magnetic field

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    МақолаSemiconductor Quantum Structures and DevicesE3S Web of Conferences202310 иқтибос
    ABI

  12. Research of the semiconductor sensors based on anomal photovoltaic effect with highly sensitive parameters of the deformation

    Odinakhon Rayimdjanova, F. Mukhtarov, Ma’murjon Ismoilov +3

    МақолаCalibration and Measurement TechniquesE3S Web of Conferences202410 иқтибос
    ABI

  13. Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +2

    МақолаSilicon Nanostructures and PhotoluminescenceApplied Solar Energy201410 иқтибос
    ABI

  14. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    МақолаAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 иқтибос
    ABI

  15. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    МақолаThermography and Photoacoustic TechniquesInorganic Materials20149 иқтибос
    ABI

  16. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 иқтибос
    ABI

  17. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
    ABI

  18. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
    ABI

  19. The Temperature Dependence of the Density of States in Semiconductors

    G. Gulyamov, Nosir Yusupjanovich Sharibaev, Ulugbek Inoyatillaevich Erkaboev

    МақолаAdvanced Semiconductor Detectors and MaterialsWorld Journal of Condensed Matter Physics20139 иқтибос
    ABI

  20. Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films

    Б. З. Полвонов, N. Kh. Yuldashev

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20169 иқтибос
    ABI

  21. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20108 иқтибос
    ABI

  22. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysics of the Solid State20158 иқтибос
    ABI

  23. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    МақолаChalcogenide Semiconductor Thin FilmsInorganic Materials20208 иқтибос
    ABI

  24. Effective dielectric permeability and electrical conductivity of polycrystalline PbTe films with disturbed stochiometry

    T. Kh. Akhmedov, S.M. Otazhonov, M. M. Khalilov +3

    МақолаAdvanced Thermoelectric Materials and DevicesJournal of Physics Conference Series20218 иқтибос
    ABI

  25. Structure, morphology and properties of ZnS crystal irradiated by electrons of different fluences

    M. Yu. Tashmetov, Bakhtiyar Madaminov, N.B. Ismatov +2

    МақолаQuantum Dots Synthesis And PropertiesInternational Journal of Modern Physics B20248 иқтибос
    ABI