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Y. S. Ergashov

15 та иш

Beruni State Technical University, Tashkent, 100095, Uzbekistan

  1. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201516 иқтибос
    ABI

  3. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 иқтибос
    ABI

  4. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisTechnical Physics201814 иқтибос
    ABI

  5. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 иқтибос
    ABI

  6. Transmission of electromagnetic waves through thin Cu films

    Y. S. Ergashov, З. А. Исаханов, Б. Е. Умирзаков

    МақолаAdvanced Memory and Neural ComputingTechnical Physics201610 иқтибос
    ABI

  7. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    МақолаAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 иқтибос
    ABI

  8. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20188 иқтибос
    ABI

  9. Electron Spectroscopy of CdMeTe Nanostructures Created on CdTe Surface Under Ion Bombardment

    Y. S. Ergashov, Umirzakov Boltakhodja

    МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20208 иқтибос
    ABI

  10. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    МақолаElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 иқтибос
    ABI

  11. Effect of implantation of Ba+ and Nb+ ions on the morphology, composition, and emission properties of Мо (111)

    Y. S. Ergashov, Б. Е. Умирзаков

    МақолаAdvanced Chemical Physics StudiesJournal of Communications Technology and Electronics20175 иқтибос
    ABI

  12. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    МақолаSemiconductor materials and devicesAIP conference proceedings20241 иқтибос
    ABI

  13. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 иқтибос
    ABI

  14. Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20210 иқтибос
    ABI

  15. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

    МақолаIon-surface interactions and analysisЖурнал технической физики20220 иқтибос
    ABI