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Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

Б. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, 100095, Tashkent, UzbekistanM. A. TursunovTashkent State Technical University, 100095, Tashkent, UzbekistanY. S. ErgashovTashkent State Technical University, 100095, Tashkent, UzbekistanG. Kh. AllayarovaTashkent State Technical University, 100095, Tashkent, Uzbekistan
Technical Physicsjournal2019en
ABI

Аннотация

Escape zone depths λ' for true-secondary electrons and photoelectrons from pure CdTe and CdTe with a Ba film of thickness θ ≤ 1 monolayer have been estimated for the first time. It is shown that upon a decrease of the work function of the surface by 2 eV, the value of λ' increases by 1.2–1.3 times.

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