Article

Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

Б. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, 100095, Tashkent, UzbekistanM. A. TursunovTashkent State Technical University, 100095, Tashkent, UzbekistanY. S. ErgashovTashkent State Technical University, 100095, Tashkent, UzbekistanG. Kh. AllayarovaTashkent State Technical University, 100095, Tashkent, Uzbekistan

Technical Physicsjournal2019en

ABI

Abstract

Escape zone depths λ' for true-secondary electrons and photoelectrons from pure CdTe and CdTe with a Ba film of thickness θ ≤ 1 monolayer have been estimated for the first time. It is shown that upon a decrease of the work function of the surface by 2 eV, the value of λ' increases by 1.2–1.3 times.

Topics

Electron and X-Ray Spectroscopy Techniques Advanced Semiconductor Detectors and Materials Machine Learning in Materials Science

Identifiers

DOI: 10.1134/s1063784219070260

Citations and references

Cited by 12 9 references

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