ZrO2 magnetron growth method and investigation of thin film growth
Б.Д. ИгамовScientific and Technical Center with a Design Bureau and Pilot Production, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, UzbekistanA.I. KamardinScientific and Technical Center with a Design Bureau and Pilot Production, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, UzbekistanY. S. ErgashovNational University of Uzbekistan, 100174, St. University, 2, Tashkent, UzbekistanI. R. BekpulatovKarshi State University, 180119, Karshi, Uzbekistan
ABI
Аннотация
In this study, the optimal modes of ZrO2 thin layer formation on the surface of Si(111)-type plate by magnetron sputtering were studied.(ZrO2/ Si) thin layer The morphology, microstructure and chemical composition of the samples were determined by scanning electron microscopy and energy dispersive X-ray spectroscopy using a Quanta 200 3D (FEI, Netherlands) microscope.The formation of chemical bonds of the thin layer was monitored using a Raman spectrometer.
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