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S. B. Donaev

34 та иш

Tashkent State Technical University, Tashkent, 100095, Uzbekistan

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 иқтибос
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  3. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    МақолаIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 иқтибос
    ABI

  4. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    МақолаMetal and Thin Film MechanicsTechnical Physics201315 иқтибос
    ABI

  5. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    МақолаMetal and Thin Film MechanicsTechnical Physics201513 иқтибос
    ABI

  6. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    МақолаIon-surface interactions and analysisTechnical Physics201513 иқтибос
    ABI

  7. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    МақолаPhotocathodes and Microchannel PlatesTechnical Physics20198 иқтибос
    ABI

  8. Study of structure formation processes in matrices of mixed components with reinforcing natural fillers

    Umida Ziyamukhamedova, Lutfullo Bakirov, S. B. Donaev +2

    МақолаMaterial Properties and ApplicationsE3S Web of Conferences20236 иқтибос
    ABI

  9. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    МақолаLaser Material Processing TechniquesTechnical Physics20195 иқтибос
    ABI

  10. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    МақолаIon-surface interactions and analysisE3S Web of Conferences20234 иқтибос
    ABI

  11. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос
    ABI

  12. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    МақолаSemiconductor materials and interfacesTechnical Physics20194 иқтибос
    ABI

  13. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    МақолаSemiconductor materials and devicesTechnical Physics Letters20204 иқтибос
    ABI

  14. Fabrication of Iron Pyrite Thin Films and Photovoltaic Devices by Sulfurization in Electrodeposition Method

    Zheng Lu, Hu Zhou, Chao Ye +5

    МақолаMetal Extraction and BioleachingNanomaterials20213 иқтибос
    ABI

  15. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос
    ABI

  16. Inorganic ammonium salt doping in nickel oxide for highly efficient planar perovskite solar cells

    Rui-Chen Song, Jianming Yang, Lifang Wu +8

    МақолаPerovskite Materials and ApplicationsRare Metals20242 иқтибос
    ABI

  17. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 иқтибос
    ABI

  18. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    МақолаIon-surface interactions and analysisAIP conference proceedings20222 иқтибос
    ABI

  19. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос
    ABI

  20. A 2D Perovskite Photodetector for NIR Range and Weak‐Light Imaging Applications via Thermal Regulation

    Lifang Wu, Qianwen Cao, Hongyu Li +13

    МақолаPerovskite Materials and ApplicationsAdvanced Functional Materials20251 иқтибос
    ABI

  21. Suppressed Defects and Improved Stability of All‐Inorganic CsSnI <sub>3</sub> Films by Solid Additive‐Assisted Chemical Vapor Deposition Process

    Hongyu Li, Chao Ye, Yichen Jin +10

    МақолаPerovskite Materials and ApplicationsSmall20251 иқтибос
    ABI

  22. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 иқтибос
    ABI

  23. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science20201 иқтибос
    ABI

  24. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20220 иқтибос
    ABI

  25. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос
    ABI