The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface
Б. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, UzbekistanР. Х. АшуровTashkent State Technical University, 100095, Tashkent, UzbekistanS. B. DonaevTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Аннотация
The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2–3 single layers is found to be ~1.4 eV.
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