Мақола

Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

S. B. DonaevTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2015en

ABI

Аннотация

The surface morphology and electronic properties of nanocrystalline phases and 2–7-nm-thick Ga1-x Al x As films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap E g of the Ga0.5Al0.5As nanocrystalline surface phase 25–30 nm in size equals 2.8–2.9 eV.

Мавзулар

Ion-surface interactions and analysis Semiconductor Quantum Structures and Devices Nanowire Synthesis and Applications

Идентификаторлар

DOI: 10.1134/s1063784215100138

Иқтибослар ва манбалар

13 та иқтибос 10 та фойдаланилган манба

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